Exhaust system for a vacuum processing system

ABSTRACT

A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to pending U.S. patent application Ser. No.11/090,255, U.S. Pat. Appl. Publ. No. 20060213437, the entire contentsof which are incorporated herein by reference. This application isfurther related to pending U.S. patent application Ser. No. 11/084,176,U.S. Pat. Appl. Publ. No. 20060211243, the entire contents of which areincorporated herein by reference. This application is further related topending U.S. patent application Ser. No. 11/090,939, U.S. Pat. Appl.Publ. No. 20060213439, the entire contents of which are incorporatedherein by reference. This application is further related to pending U.S.patent application Ser. No. 11/281,343, U.S. Pat. Appl. Publ. No.20070116888, the entire contents of which are incorporated herein byreference. This application is further related to pending U.S. patentapplication Ser. No. 11/281,342, U.S. Pat. Appl. Publ. No. 20070116887,the entire contents of which are incorporated herein by reference. Thisapplication is further related to pending U.S. patent application Ser.No. 11/305,036, U.S. Pat. Appl. Publ. No. 20070157683, the entirecontents of which are incorporated herein by reference. This applicationis further related to pending U.S. patent application Ser. No.11/281,376, U.S. Pat. Appl. Publ. No. 20070116873, the entire contentsof which are incorporated herein by reference. This application isfurther related to co-pending U.S. patent application Ser. No.11/369,939, entitled “VACUUM SEALING DEVICE FOR A PROCESSING SYSTEM”,U.S. Pat. Appl. Publ No. 20070209590, the entire contents of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a vacuum processing system and a methodof operating thereof, and more particularly to a vacuum processingsystem having an exhaust system configured to exhaust the vacuumprocessing system and optionally exhaust a gas injection system coupledto the vacuum processing system.

2. Description of Related Art

Typically, during materials processing, when fabricating compositematerial structures, a plasma is frequently employed to facilitate theaddition and removal of material films. For example, in semiconductorprocessing, a dry plasma etch process is often utilized to remove oretch material along fine lines or within vias or contacts patterned on asilicon substrate. Alternatively, for example, a vapor depositionprocess is utilized to deposit material along fine lines or within viasor contacts on a silicon substrate. In the latter, vapor depositionprocesses include chemical vapor deposition (CVD), and plasma enhancedchemical vapor deposition (PECVD).

In PECVD, a plasma is utilized to alter or enhance the film depositionmechanism. For instance, plasma excitation generally allows film-formingreactions to proceed at temperatures that are significantly lower thanthose typically required to produce a similar film by thermally excitedCVD. In addition, plasma excitation may activate film-forming chemicalreactions that are not energetically or kinetically favored in thermalCVD. The chemical and physical properties of PECVD films may thus bevaried over a relatively wide range by adjusting process parameters.

More recently, atomic layer deposition (ALD), and plasma enhanced ALD(PEALD) have emerged as candidates for ultra-thin gate film formation infront end-of-line (FEOL) operations, as well as ultra-thin barrier layerand seed layer formation for metallization in back end-of-line (BEOL)operations. In ALD, two or more process gases, such as a film precursorand a reduction gas, are introduced alternatingly and sequentially whilethe substrate is heated in order to form a material film one monolayerat a time. In PEALD, plasma is formed during the introduction of thereduction gas to form a reduction plasma. To date, ALD and PEALDprocesses have proven to provide improved uniformity in layer thicknessand conformality to features on which the layer is deposited, albeitthese processes are slower than their CVD and PECVD counterparts.

SUMMARY OF THE INVENTION

One aspect of the present invention is directed to addressing variousproblems with semiconductor processing at ever decreasing line sizeswhere conformality, adhesion, and purity are becoming increasinglyimportant issues affecting the resultant semiconductor device.

Another aspect of the present invention is to reduce contaminationproblems between interfaces of subsequently deposited or processedlayers.

Yet another aspect of the present invention is to facilitate thetransition from one process gas used in a process chamber to anotherprocess gas.

Yet another aspect of the present invention is to facilitate vacuumpumping of areas with traditionally lower conductance.

Another aspect of the present invention is to provide a configurationcompatible for vapor deposition and sample transfer within the samesystem.

Variations of these and/or other aspects of the present invention areprovided by certain embodiments of the present invention.

In one non-limiting embodiment of the present invention, a vacuumprocessing system includes, a vacuum processing chamber configured totreat a substrate, a vacuum pump in fluid communication with, andconfigured to exhaust, a process space in said vacuum processingchamber; and a process material supply system in fluid communicationwith said vacuum pump separately from said process space and configuredto introduce a process gas to said process space via a gas injectionsystem.

In another non-limiting embodiment, the invention includes a vacuumprocessing system, having, a vacuum processing chamber configured totreat a substrate; a vacuum pump in fluid communication with, andconfigured to exhaust, a process space in said vacuum processingchamber; a process material supply system configured to introduce aprocess gas to said process space via a gas injection system; and meansfor evacuating said process material supply system separately from saidprocess space.

In another embodiment of the present invention, a vacuum processingsystem is described, comprising: a vacuum processing chamber configuredto treat a substrate; a vacuum pump coupled to the vacuum processingchamber and configured to exhaust a process space in the vacuumprocessing chamber; a primary vacuum line configured to pneumaticallycouple the vacuum pump to the vacuum processing chamber and to permit aflow of exhaust gases from the process space to the vacuum pump; aprocess material supply system coupled to the vacuum processing chamberand configured to introduce a process gas to the process space; aprocess gas supply line configured to pneumatically couple the processmaterial supply system to the vacuum processing chamber and to permitthe flow of process gas from the process material supply system to theprocess space; an auxiliary vacuum line coupled to the process gassupply line and configured to pneumatically couple the process gassupply line with the vacuum pump; a flow valve system coupled to theprocess gas supply line and the auxiliary vacuum line, and configured toopen the process gas supply line and close the auxiliary vacuum lineduring a flow of gas from the process material gas supply system to theprocess space, and configured to close the process gas supply line andopen the auxiliary vacuum line during evacuation of the process gassupply line by the vacuum pump.

In another embodiment of the present invention, a method, and computerreadable medium containing instructions, for treating a substrate in avacuum processing chamber is described, comprising: evacuating a processspace in the vacuum processing chamber through a primary vacuum lineusing a vacuum pump; introducing a process gas to the process spacethrough a process gas supply line in order to treat the substrate;terminating the flow of the process gas to the process space; andevacuating the process gas supply line through an auxiliary vacuum lineusing the vacuum pump.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings, a more complete appreciation of thepresent invention and many attendant advantages thereof will be readilyobtained as the same becomes better understood by reference to thefollowing detailed description when considered in connection with theaccompanying drawings, wherein:

FIG. 1A depicts a schematic view of a deposition system in accordancewith one embodiment of the present invention;

FIG. 1B depicts a schematic view of another deposition system inaccordance with one embodiment of the present invention;

FIG. 2A depicts a schematic view of the deposition system of FIG. 1A inaccordance with one embodiment of the present invention in which sampletransfer is facilitated at a lower sample stage position;

FIG. 2B depicts a schematic view of the deposition system of FIG. 1B inaccordance with one embodiment of the present invention in which sampletransfer is facilitated at a lower sample stage position;

FIG. 3 depicts an exhaust system for a vacuum processing system inaccordance with one embodiment of the present invention;

FIG. 4 depicts a schematic view of a sealing mechanism;

FIG. 5 depicts a schematic view of a sealing mechanism in accordancewith one embodiment of the present invention;

FIG. 6 depicts a schematic view of another sealing mechanism inaccordance with one embodiment of the present invention;

FIG. 7 shows a flow diagram for exhausting a vacuum processing system inaccordance with one embodiment of the present invention; and

FIG. 8 shows a process flow diagram of a process in accordance with oneembodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

In the following description, in order to facilitate a thoroughunderstanding of the invention and for purposes of explanation and notlimitation, specific details are set forth, such as a particulargeometry of the deposition system and descriptions of variouscomponents. However, it should be understood that the invention may bepracticed in other embodiments that depart from these specific details.

Referring now to the drawings, wherein like reference numerals designateidentical or corresponding parts throughout the several views, FIG. 1Aillustrates a deposition system 1 for depositing a thin film, such as abarrier film, on a substrate using for example a chemical vapordeposition (CVD) process, a plasma enhanced CVD (PECVD) process, anatomic layer deposition (ALD) process, or a plasma enhanced atomic layerdeposition (PEALD) process. During the metallization of inter-connectand intra-connect structures for semiconductor devices inback-end-of-line (BEOL) operations, a thin conformal barrier layer maybe deposited on wiring trenches or vias to minimize the migration ofmetal into the inter-level or intra-level dielectric, a thin conformalseed layer may be deposited on wiring trenches or vias to provide a filmwith acceptable adhesion properties for bulk metal fill, and/or a thinconformal adhesion layer may be deposited on wiring trenches or vias toprovide a film with acceptable adhesion properties for metal seeddeposition. In addition to these processes, a bulk metal such as coppermust be deposited within the wiring trench or via.

As line sizes shrink, PEALD has emerged as a leading candidate for suchthin films. For example, a thin barrier layer is preferably performedusing a self-limiting ALD process, such as PEALD, since it providesacceptable conformality to complex, high aspect ratio features. In orderto achieve a self-limiting deposition characteristic, a PEALD processinvolves alternating different process gases, such as a film precursorand a reduction gas, whereby a film precursor is adsorbed to thesubstrate surface in a first step and then reduced to form the desiredfilm in a second step. Due to the alternation of two process gases in avacuum chamber, deposition occurs at a relatively slow deposition rate.

The present inventors have recognized that a PEALD process, as well as aCVD process, can benefit by separating the process space within whichthe PEALD process is performed from a transfer space within which thesubstrate is transferred into and out of the processing chamber. Thephysical isolation of the process space and the transfer space reducesthe contamination of processed substrates. Further, physical isolationof the process space from the transfer space can reduce overall timerequired to pump the process space to a desired vacuum level.Additionally, physical isolation of the process space from the transferspace can reduce the amount of process gas used in a given processbecause the volume of the process chamber is smaller than the combinedvolume of the process space and transfer space. Moreover, as the processspace surface area is smaller, cleaning of the process chamber may beeasier.

Since CVD and ALD processes are know to be “dirtier” than otherdeposition techniques, such as physical vapor deposition (PVD), thephysical isolation of the process space and the transfer space canfurther reduce the transport of contamination from the processingchamber to other processing chambers coupled to the central transfersystem.

Thus, it is described in related applications (TTCA-027; Ser. No.11/090,939), (TTCA-056; Ser. No. 11/281,376), and (TTCA-069; Ser. No.11/281,372) to separate a process space from a transfer space in orderto reduce contamination of processed substrates; the entire contents ofeach of which are herein incorporated by reference in their entirety.

When physically separating the process space from the transfer space, afirst vacuum pumping system and a second vacuum pumping system aretypically used to separately pump the process space and the transferspace, respectively.

Further, the materials used for the CVD and ALD processes areincreasingly more complex. For example, when depositing metal containingfilms, metal halide film precursors or metal-organic film precursors areutilized. As such, the processing chambers are often contaminated withprecursor residue or partially decomposed precursor residue or both onwalls of the deposition system.

One way to reduce film precursor residue on chamber surfaces is toincrease a temperature of the surfaces in the processing chambers to apoint where precursor accumulation cannot occur. However, the presentinventors have recognized that such a high temperature chamber(especially when used with elastomer seals) can cause air and watervapor from outside of the (vacuum) processing chamber, and thereforecontaminants, to permeate through the seals of the processing chamber.For example, while maintaining one chamber component at an elevatedtemperature with another chamber component at a lower temperature, theinventors have observed an increase in processing chamber contaminationfrom outside of the chamber when the sealing member comprises elastomerseals used with conventional sealing schemes.

Hence, another aspect of the present invention is to physically separatethe process space from the transfer space of the processing chamberduring processing, and thereby maintain the process space surfaces at arelatively high temperature to reduce film precursor accumulation, whilemaintaining transfer space surfaces at a lower temperature to reducecontamination within the transfer space region.

As shown in FIG. 1A, in one embodiment of the present invention, thedeposition system 101 includes a processing chamber 110 having asubstrate stage 120 configured to support a substrate 125, upon which amaterial deposit such as a thin film is formed. The processing chamber110 further includes an upper chamber assembly 130 configured to definea process space 180 when coupled with substrate stage 120, and a lowerchamber assembly 132 configured to define a transfer space 182 withtransfer port 184 through which substrate 125 may be placed on thesubstrate stage 120. Optionally, as shown in FIG. 1B, an intermediatesection 131 (i.e., a mid-chamber assembly) can be used in depositionsystem 101′ to connect the upper chamber assembly 130 to the lowerchamber assembly 132. Additionally, the deposition system 101 includes aprocess material supply system 140 configured to introduce a firstprocess material, a second process material, or a purge gas toprocessing chamber 110. Additionally, the deposition system 101 includesa first power source 150 coupled to the processing chamber 110 andconfigured to generate plasma in the processing chamber 110, and asubstrate temperature control system 160 coupled to substrate stage 120and configured to elevate and control the temperature of substrate 125.Additionally, the deposition system 101 includes a process volumeadjustment system 122 coupled to the processing chamber 110 and thesubstrate holder 120, and configured to adjust the volume of the processspace 180 adjacent substrate 125. For example, the process volumeadjustment system 122 can be configured to vertically translate thesubstrate holder 120 between a first position for processing substrate125 (see FIGS. 1A and 1B) and a second position for transferringsubstrate 125 into and out of processing chamber 110 (see FIGS. 2A and2B).

Furthermore, the deposition system 101 includes a first vacuum pump 190coupled to process space 180, wherein a first vacuum valve 194 isutilized to control the pumping speed delivered to process space 180.The deposition system 101 includes a second vacuum pump 192 coupled totransfer space 182, wherein a second vacuum valve 196 is utilized toisolate the second vacuum pump 192 from transfer space 182, whennecessary.

The process material supply system 140 can include a first processmaterial supply system and a second process material supply system whichare configured to alternatingly introduce a first process material toprocessing chamber 110 and a second process material to processingchamber 110. The alternation of the introduction of the first processmaterial and the introduction of the second process material can becyclical, or it may be acyclical with variable time periods betweenintroduction of the first and second process materials. The firstprocess material can, for example, include a film precursor, such as acomposition having the principal atomic or molecular species found inthe film formed on substrate 125. For instance, the film precursor canoriginate as a solid phase, a liquid phase, or a gaseous phase, and maybe delivered to processing chamber 110 in a gaseous phase.

The second process material can, for example, include a reducing agent.For instance, the reducing agent can originate as a solid phase, aliquid phase, or a gaseous phase, and it may be delivered to processingchamber 110 in a gaseous phase. Examples of gaseous film precursors andreduction gases are given below.

Additionally, the process material supply system 140 can further includea purge gas supply system that can be configured to introduce a purgegas to processing chamber 110 between introduction of the first processmaterial and the second process material to processing chamber 110,respectively. The purge gas can include an inert gas, such as a noblegas (i.e., helium, neon, argon, xenon, krypton), or nitrogen (andnitrogen containing gases), or hydrogen (and hydrogen containing gases).

The process gas supply system 140 can include one or more materialsources, one or more pressure control devices, one or more flow controldevices, one or more filters, one or more valves, or one or more flowsensors. The process gas supply system 140 can supply one or moreprocess gases to plenum 142, that functions as a gas distributionportion through which gases are dispersed to a plurality of orifices 146in injection plate 144. The plurality of orifices 146 in injection plate144 facilitates the distribution of process gases within process space180. A showerhead design, as known in the art, can be used to uniformlydistribute the first and second process gas materials into the processspace 180. Exemplary showerheads are described in greater detail in U.S.Ser. No. 11/090,255 and in pending U.S. Patent Application Pub. No.20040123803 (U.S. Ser. No. 10/469,592), the entire contents of each ofwhich are incorporated herein by reference in their entirety.

Further yet, deposition system 101 includes a controller 170 that can becoupled to processing chamber 110, substrate holder 120, upper assembly130, lower assembly 132, process material supply system 140, first powersource 150, substrate temperature control system 160, process volumeadjustment system 122, first vacuum pump 190, first vacuum valve 194,second vacuum pump 192, and second vacuum valve 196.

The deposition system 101 may be configured to process 200 mmsubstrates, 300 mm substrates, or larger-sized substrates, for example.In fact, it is contemplated that the deposition system may be configuredto process substrates, wafers, or LCDs regardless of their size, aswould be appreciated by those skilled in the art. Substrates can beintroduced to processing chamber 110, and may be lifted to and from anupper surface of substrate holder 120 via substrate lift system (notshown).

Referring back to FIG. 1A, deposition system 101 can be configured toperform a thermal deposition process (i.e., a deposition process notutilizing a plasma), such as a thermal atomic layer deposition (ALD)process or a thermal chemical vapor deposition (CVD) process.Alternatively, deposition system 101 can be configured for a plasmaenhanced deposition process in which either of the first processmaterial or the second process material can be plasma activated. Theplasma enhanced deposition process can include a plasma enhanced ALD(PEALD) process, or it may include a plasma enhanced CVD (PECVD)process.

In a PEALD process, a first process material, such as a film precursor,and a second process material, such as a reduction gas, are sequentiallyand alternatingly introduced to form a thin film on a substrate. Forexample, when preparing a tantalum-containing film using a PEALDprocess, the film precursor can comprise a metal halide (e.g., tantalumpentachloride), or a metal organic (e.g., Ta(NC(CH₃)₂C₂H₅)(N(CH₃)₂)₃;hereinafter referred to as TAIMATA®; for additional details, see U.S.Pat. No. 6,593,484). In this example, the reduction gas can includehydrogen, ammonia (NH₃), N₂ and H₂, N₂H₄, NH(CH₃)₂, or N₂H₃CH₃, or anycombination thereof.

The film precursor is introduced to processing chamber 110 for a firstperiod of time in order to cause adsorption of the film precursor onexposed surfaces of substrate 125. Preferably, a monolayer adsorption ofmaterial occurs. Thereafter, the processing chamber 110 is purged with apurge gas for a second period of time. After adsorbing film precursor onsubstrate 125, a reduction gas is introduced to processing chamber 110for a third period of time, while power is coupled through, for example,the upper assembly 130 from the first power source 150 to the reductiongas. The coupling of power to the reduction gas heats the reduction gas,thus causing ionization and dissociation of the reducing gas in order toform, for example, dissociated species such as atomic hydrogen which canreact with the adsorbed Ta film precursor to reduce the adsorbed Ta filmprecursor to form the desired Ta containing film. This cycle can berepeated until a Ta containing layer of sufficient thickness isproduced.

As shown in FIG. 1A, the process space 180 is separated from thetransfer space 182 by the substrate stage 120, a flange 302 on thesubstrate stage 120, and an extension 304 from the upper chamberassembly 130. As such, there can be a sealing mechanism at the base ofthe extension 304 to seal or at least impede gas flow between theprocess space and the transfer space (to be discussed in detail later).Thus, surfaces of the process space 180 can be maintained at an elevatedtemperature to prevent accumulation of process residues on surfacessurrounding that space, while surfaces of the transfer space can bemaintained at a reduced temperature to reduce contamination of the lowerassembly 132 (including sidewalls) and the intermediate section 131 andthe upper assembly 132.

In this regard separation of the process space from the transfer space,in one embodiment of the present invention, involves thermal separationof the elevated upper chamber assembly 130 from the reduced temperaturelower chamber assembly 132. For thermal separation, the extension 304can function as a radiation shield. Moreover, the extension 304including an interior channel 312 can function as a thermal impedancelimiting the heat flow across the extension element into the transferspace 182 surrounding the extension 304.

In another example of thermal separation, a cooling channel can beprovided in the upper chamber assembly 130 near the lower chamberassembly 132 as shown in FIG. 1A, or near the intermediate section 131as shown in FIG. 1B, or can be provided in the intermediate section 131.Further, the thermal conductivity of the materials for the upper chamberassembly 130 and the intermediate section 131 can be different. Forexample, the upper chamber assembly 130 can be made of aluminum or analuminum alloy, and the intermediate section 131 can be made ofstainless steel. The lower chamber assembly 132 can be made of aluminumor an aluminum alloy.

In one example, a vapor deposition process can be used be to deposittantalum (Ta), tantalum carbide, tantalum nitride, or tantalumcarbonitride in which a Ta film precursor such as TaF₅, TaCl₅, TaBr₅,TaI₅, Ta(CO)₅, Ta[N(C₂H₅CH₃)]₅ (PEMAT), Ta[N(CH₃)₂]₅ (PDMAT),Ta[N(C₂H₅)₂]₅ (PDEAT), Ta(NC(CH₃)₃)(N(C₂H₅)₂)₃ (TBTDET),Ta(NC₂H₅)(N(C₂H₅)₂)₃, Ta(NC(CH₃)₂C₂H₅)(N(CH₃)₂)₃, orTa(NC(CH₃)₃)(N(CH₃)₂)₃, adsorbs to the surface of the substrate followedby exposure to a reduction gas or plasma such as H₂, NH₃, N₂ and H₂,N₂H₄, NH(CH₃)₂, or N₂H₃CH₃.

In another example, titanium (Ti), titanium nitride, or titaniumcarbonitride can be deposited using a Ti precursor such as TiF₄, TiCl₄,TiBr₄, TiI₄, Ti[N(C₂H₅CH₃)]₄ (TEMAT), Ti[N(CH₃)₂]₄ (TDMAT), orTi[N(C₂H₅)₂]₄ (TDEAT), and a reduction gas or plasma including H₂, NH₃,N₂ and H₂, N₂H₄, NH(CH₃)₂, or N₂H₃CH₃.

As another example, tungsten (W), tungsten nitride, or tungstencarbonitride can be deposited using a W precursor such as WF₆, orW(CO)₆, and a reduction gas or plasma including H₂, NH₃, N₂ and H₂,N₂H₄, NH(CH₃)₂, or N₂H₃CH₃.

In another example, molybdenum (Mo) can be deposited using a Moprecursor such as molybdenum hexafluoride (MoF₆), and a reduction gas orplasma including H₂.

In another example, Cu can be deposited using a Cu precursor havingCu-containing organometallic compounds, such as Cu(TMVS)(hfac), alsoknown by the trade name CupraSelect®, available from Schumacher, a unitof Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad,Calif. 92009), or inorganic compounds, such as CuCl. The reduction gasor plasma can include at least one of H₂, O₂, N₂, NH₃, or H₂O. As usedherein, the term “at least one of A, B, C, . . . or X” refers to any oneof the listed elements or any combination of more than one of the listedelements.

In another example of a vapor deposition process, when depositingzirconium oxide, the Zr precursor can include Zr(NO₃)₄, or ZrCl₄, andthe reduction gas can include H₂O.

When depositing hafnium oxide, the Hf precursor can includeHf(OBu^(t))₄, Hf(NO₃)₄, or HfCl₄, and the reduction gas can include H₂O.In another example, when depositing hafnium (Hf), the Hf precursor caninclude HfCl₄, and the second process material can include H₂.

When depositing niobium (Nb), the Nb precursor can include niobiumpentachloride (NbCl₅), and the reduction gas can include H₂.

When depositing zinc (Zn), the Zn precursor can include zinc dichloride(ZnCl₂), and the reduction gas can include H₂.

When depositing silicon oxide, the Si precursor can include Si(OC₂H₅)₄,SiH₂Cl₂, SiCl₄, or Si(NO₃)₄, and the reduction gas can include H₂O orO₂. In another example, when depositing silicon nitride, the Siprecursor can include SiCl₄, or SiH₂Cl₂, and the reduction gas caninclude NH₃, or N₂ and H₂. In another example, when depositing TiN, theTi precursor can include titanium nitrate (Ti(NO₃)), and the reductiongas can include NH₃.

In another non-limiting example of a vapor deposition process, whendepositing aluminum, the Al precursor can include aluminum chloride(Al₂Cl₆), or trimethylaluminum (Al(CH₃)₃), and the reduction gas caninclude H₂. When depositing aluminum nitride, the Al precursor caninclude aluminum trichloride, or trimethylaluminum, and the reductiongas can include NH₃, or N₂ and H₂. In another example, when depositingaluminum oxide, the Al precursor can include aluminum chloride, ortrimethylaluminum, and the reduction gas can include H₂O, or O₂ and H₂.

In another non-limiting example of a vapor deposition process, whendepositing GaN, the Ga precursor can include gallium nitrate (Ga(NO₃)₃),or trimethylgallium (Ga(CH₃)₃), and the reduction gas can include NH₃.

In the examples given above for forming various material layers, theprocess material deposited can include at least one of a metal film, ametal nitride film, a metal carbonitride film, a metal oxide film, or ametal silicate film. For example, the process material deposited caninclude at least one of a tantalum film, a tantalum nitride film, or atantalum carbonitride film. Alternatively, for example, the processmaterial deposited can include for example an Al film, or a Cu filmdeposited to metallize a via for connecting one metal line to anothermetal line or for connecting a metal line to source/drain contacts of asemiconductor device. The Al or Cu films can be formed with or without aplasma process using precursors for the Al and Cu as described above.Alternatively, for example, the process material deposited can include azirconium oxide film, a hafnium oxide film, a hafnium silicate film, asilicon oxide film, a silicon nitride film, a titanium nitride film,and/or a GaN film deposited to form an insulating layer such as forexample above for a metal line or a gate structure of a semiconductordevice.

Further, silane and disilane could be used as silicon precursors for thedeposition of silicon-based or silicon including films. Germane could beused a germanium precursor for the deposition of germanium-based orgermanium-including films. As such, the process material deposited caninclude a metal silicide film and/or a germanium including filmdeposited for example to form a conductive gate structure for asemiconductor device.

Referring still to FIG. 1A, the deposition system 101 can include aplasma generation system configured to generate a plasma during at leasta portion of the alternating introduction of the first process materialand the second process material to processing chamber 110. The plasmageneration system can include the first power source 150 coupled to theprocessing chamber 110, and configured to couple power to the firstprocess material, or the second process material, or both in processingchamber 110. The first power source 150 may include a radio frequency(RF) generator and an impedance match network (not shown), and mayfurther include an electrode (not shown) through which RF power iscoupled to plasma in processing chamber 110. The electrode can be formedin the substrate stage 120, or may be formed in the upper assembly 130and can be configured to oppose the substrate stage 120. The substratestage 120 can be electrically biased with a DC voltage or at an RFvoltage via the transmission of RF power from an RF generator (notshown) through an impedance match network (not shown) to substrate stage120.

The impedance match network can be configured to optimize the transferof RF power from the RF generator to the plasma by matching the outputimpedance of the match network with the input impedance of theprocessing chamber, including the electrode, and plasma. For instance,the impedance match network serves to improve the transfer of RF powerto plasma in plasma processing chamber 110 by reducing the reflectedpower. Match network topologies (e.g. L-type, π-type, T-type, etc.) andautomatic control methods are well known to those skilled in the art. Atypical frequency for the RF power can range from about 0.1 MHz to about100 MHz. Alternatively, the RF frequency can, for example, range fromapproximately 400 kHz to approximately 60 MHz, By way of furtherexample, the RF frequency can, for example, be approximately 13.56 or27.12 MHz.

Still referring to FIG. 1A, deposition system 101 includes substratetemperature control system 160 coupled to the substrate stage 120 andconfigured to elevate and control the temperature of substrate 125.Substrate temperature control system 160 includes temperature controlelements, such as a cooling system including a re-circulating coolantflow that receives heat from substrate stage 120 and transfers heat to aheat exchanger system (not shown), or when heating, transfers heat fromthe heat exchanger system. Additionally, the temperature controlelements can include heating/cooling elements, such as resistive heatingelements, or thermoelectric heaters/coolers can be included in thesubstrate holder 120, as well as the chamber wall of the processingchamber 110 and any other component within the deposition system 101.

In order to improve the thermal transfer between substrate 125 andsubstrate stage 120, substrate stage 120 can include a mechanicalclamping system, or an electrical clamping system, such as anelectrostatic-clamping system, to affix substrate 125 to an uppersurface of substrate stage 120. Furthermore, substrate holder 120 canfurther include a substrate backside gas delivery system configured tointroduce gas to the backside of substrate 125 in order to improve thegas-gap thermal conductance between substrate 125 and substrate stage120. Such a system can be utilized when temperature control of thesubstrate is required at elevated or reduced temperatures. For example,the substrate backside gas system can include a two-zone gasdistribution system, wherein the helium gas gap pressure can beindependently varied between the center and the edge of substrate 125.

Furthermore, the processing chamber 110 is further coupled to the firstvacuum pump 190 and the second vacuum pump 192. The first vacuum pump190 can include a turbo-molecular pump, and the second vacuum pump 192can include a cryogenic pump.

The first vacuum pump 190 can include a turbo-molecular vacuum pump(TMP) capable of a pumping speed up to about 5000 liters per second (andgreater) and valve 194 can include a gate valve for throttling thechamber pressure. In conventional plasma processing devices utilized fordry plasma etch, a 1000 to 3000 liter per second TMP is generallyemployed. Moreover, a device for monitoring chamber pressure (not shown)can be coupled to the processing chamber 110. The pressure measuringdevice can be, for example, a Type 628B Baratron absolute capacitancemanometer commercially available from MKS Instruments, Inc. (Andover,Mass.).

As shown in FIGS. 1A, 1B, 2A and 2B, the first vacuum pump 190 can becoupled to process space 180 such that it is located above the plane ofsubstrate 125. However, the first vacuum pump 190 can be configured toaccess process space 180 such that it pumps process space 180 from alocation below the plane of substrate 125 in order to, for example,reduce particle contamination. Of course, other orientations arepossible. The fluid coupling between the location of pumping fromprocess space 180 and the inlet to the first vacuum pump 190 can bedesigned for maximal flow conductance. Alternately, the fluid couplingbetween the location of pumping from process space 180 and the inlet tothe first vacuum pump 190 can be designed for a substantially constantcross-sectional area.

In one embodiment, the first vacuum pump 190 is located above the upperchamber assembly 130 and is coupled to an upper surface thereof (seeFIG. 1A). The inlet 191 of the first vacuum pump 190 is coupled to atleast one annular volume, such as a pumping channel 312, which iscoupled through extension 304 to one or more openings 305 that accessprocess space 180 at a location below the plane of substrate 125. Theone or more openings 305 may comprise one or more slots, one or moreorifices, or any combination thereof. The pumping channel may encirclethe substrate stage 120 either partially or fully.

In another embodiment, the first vacuum pump 190 is located above theupper chamber assembly 130 and is coupled to an upper surface thereof(see FIG. 1A). The inlet 191 of the first vacuum pump 190 is coupled toa first annular volume that is in turn coupled to a second annularvolume, whereby the first annular volume and the second annular volumeare coupled via one or more pumping ports. The second annular volume canbe coupled to pumping channel 312, which is coupled through extension304 to one or more openings 305 that access process space 180 at alocation below the plane of substrate 125. For example, the one or morepumping ports may comprise two through-holes diametrically opposing oneanother (i.e., 180 degrees apart) between the first annular volume andthe second annular volume. However, the number of pumping ports may bemore or less, and their location may vary. Additionally, for example,the one or more openings 305 may comprise two slots diametricallyopposing one another (i.e., 180 degrees apart). Furthermore, each slotcan extend approximately 120 degrees in the azimuthal direction.However, the number of openings 305 may be more or less, and theirlocation and size may vary.

As described above, during processing of substrate 125, process space180 is vacuum isolated from the transfer space 182, as illustrated inFIGS. 1A and 1B. The first vacuum pump 190 facilitates the removal ofeffluent from the process performed in process space 180, while thesecond vacuum pump 192 facilitates the maintenance of a clean, vacuumenvironment in transfer space 182. During the transfer of substrate 125into and out of deposition system 101′, process space 180 is open to thetransfer space 182, as illustrated in FIGS. 2A and 2B. The first vacuumpump 190 and the second vacuum pump 192 evacuate the process space 180and the transfer space 182, respectively, while a purge gas may beutilized to assist the removal of residual process gas, processeffluent, and other contaminants from deposition system 101′.

Typically, for example, the removal of residual process gases andcontaminants from confined spaces, such as (gas injection) plenum 142,is performed through passages having limited conductance, such as theplurality of orifices 146 in injection plate 144, and, therefore, theadequate removal of such gases is inhibited. Inadequate removal ofprocess contaminants from previous processes can worsen contaminationissues for subsequent processes in the deposition system.

Referring now to FIG. 3, an exhaust system is presented for a depositionsystem 101″ in accordance with one embodiment. As illustrated in FIGS.1A, 1B, 2A and 2B, and FIG. 3, process gas is introduced to processspace 180 through process gas supply line 408. Also, as illustrated inFIGS. 1A, 1B, 2A and 2B, and FIG. 3, the first vacuum pump 190 iscoupled to process space 180 through a primary vacuum line 406. Duringprocessing of substrate 125 in deposition system 101″, process gas flowsthrough process gas supply line 408 to process space 180, while excessprocess gas and process effluent are exhausted from process space 180through the primary vacuum line 406. During substrate transfer into andout of deposition system 101″ or during time periods when not processingsubstrate 125, the process gas supply line 406 and, for example, theplenum 142 can be evacuated by pneumatically coupling the first vacuumpump 190 to the process gas supply line 406 though an auxiliary vacuumline 400. Thus, the area inside the plenum 142 can be evacuatedseparately from the process space. That is, the plenum 142 is in fluidcommunication with the first vacuum pump 190 via a direct vacuum line.Accordingly, limited conductance between the plenum 142 and the pump 190via the process chamber 180 becomes less of a problem because most orall of the evacuation of the area inside the plenum 142 will be donethrough the dedicated line. Further, the portion of the process gassupply line connected on the process chamber side of the second flowvalve 404 will be pumped more directly than would occur if no auxiliaryvacuum line 400 were connected.

In some cases, the plenum 142 (or other area of low conductance to theprocess space 180) may be connected to the first vacuum pump 190 via adedicated vacuum line with no common passageway with the process gassupply line 408. In other words, the auxiliary vacuum line has aseparate connection to the plenum 142 or other area of low conductancein the process space 180. One benefit of this configuration is that thededicated vacuum line can be made to maximize conductance to the firstvacuum pump 190 without regard to the distance between the process gassource and the plenum 142.

A flow valve system, coupled to the process gas supply line 406 and theauxiliary vacuum line 400, can facilitate a flow of gas from the processmaterial supply system 140 through the process gas supply line 406 toprocess space 180 by opening the process gas supply line 406 to permitthe flow of gas while closing off the auxiliary vacuum line 400 toprevent evacuation by the first vacuum pump 190. Additionally, the flowvalve system, coupled to the process gas supply line 406 and theauxiliary vacuum line 400, can prevent a flow of gas from the processmaterial supply system 140 through the process gas supply line 406 toprocess space 180 by closing off the process gas supply line 406 toprevent the flow of gas while opening the auxiliary vacuum line 400 topermit evacuation of the process gas supply line 406 by the first vacuumpump 190. In one embodiment, the flow valve system can include athree-way vacuum valve. The use of a three-way valve can reduce thenumber of valves used in the system, thus simplifying construction andcontrol of the system. In another embodiment, the flow valve system caninclude a first flow valve 402 in the auxiliary vacuum line 400 and asecond flow valve 404 in the process gas supply line 406. The first flowvalve 402 may be opened and the second flow valve 404 may be closed topermit the first vacuum pump 190 to exhaust process space 180 throughthe primary vacuum line 406 and exhaust process gas supply line 408,plenum 142, etc., through the auxiliary vacuum line 400. Alternatively,the first flow valve 402 may be closed and the second flow valve 404 maybe opened to permit the flow of gas from process material supply system140 to process space 180. The use of separate valves for each lineallows more flexibility in processing and standardization of the typesof valves used throughout the system. The auxiliary vacuum line 400 maybe implemented via polished stainless steel tubing, for example. Inother embodiments, the auxiliary vacuum line 400 is built into thechamber itself, thus reducing complexity and number of external parts.Further, the vacuum line 400 may be implemented by directly connectingthe first vacuum pump 190 to a plenum in which the process gas isinjected. This configuration is advantageous in that it enhancesconductance between the first vacuum pump 190 and the area in which theprocess gas has the highest concentration. In this embodiment, the firstvacuum pump 190 is exposed and shielded from the process space 180 via avalve such as a gate valve. Further, the first pump 190 may be directlymounted on the processing chamber 110 so as to maximize conductancebetween the first pump 190 and the process space 180. In thisembodiment, the first pump 190 is shielded from the process space by avalve such as a gate valve.

As noted above, it is desirable to be able to provide vacuum isolationbetween the process space 180 and the transfer space 182, or at leastimpede the flow of gases between the process space 180 and the transferspace 182 during processing. By not requiring perfect isolation of theprocess space 180 and the transfer space 182, the sealing device betweenthe process space 180 and the transfer space 182 can be made simpler.However, pumping requirements may increase in proportion to the amountof leakage.

FIG. 4 depicts the detail area 200 (shown in FIGS. 1A and 1B) andillustrates one device and method for providing vacuum isolation betweenprocess space 180 and the transfer space 182 by providing a sealingdevice between the substrate stage 120 and the upper assembly 130 whenthe deposition system 101 is in a processing configuration. As such, thesystem includes a sealing member that impedes the flow of gas betweenthe process space and the transfer space. Indeed, in one embodiment, aseal of the sealing member separates the vacuum environment of theprocess space from the vacuum environment of the transfer space. Byvacuum separating the process space from the transfer space, the seal isable to reduce leakage between the process space and the transfer spaceto less than 10⁻³ Torr-l/s and preferably less than 10⁻⁴ Torr-l/s.

FIG. 4 is a schematic diagram illustrating a seal configuration forproducing a seal between a flange 302 of the substrate stage 120 and anextension 304 from the upper chamber assembly 130. As shown in FIG. 4, aseal 306 is located in a groove 308 of the flange 302 of the substratestage 120. Details of the seal 306 will be described below. Asillustrated in FIG. 4, the seal 306 contacts a bottom plate 310 (i.e., aseal plate) of the extension 304. A pumping channel 312 is provided inthe extension 304 for the purpose of evacuating gases from processingregion 180 to pump 190. The configuration shown in FIG. 4 provides anadequate seal; however, during the release of the seal followingsubstrate processing, the seal 306 has a tendency to stick. Afterrepeated use, i.e., engaging the seal during processing and disengagingthe seal during substrate transfer, this occasional or persistent“sticking” of the seal can cause damage to the seal and thereby lead topoor vacuum isolation between the process space and the transfer spaceand increased contamination. Moreover, the difference in temperaturebetween the substrate stage 120 and the upper chamber assembly 130 canexacerbate the demise of seal 306.

Referring now to FIG. 5, according to one embodiment of the invention, aseal configuration for producing a seal between a first sealing surfaceon a first chamber assembly and a second sealing surface on a secondchamber assembly, while improving the release of the seal followingprocessing, is illustrated. For example, the first sealing surface onthe first chamber assembly can include first sealing surface 303 a onextension 304 from the upper chamber assembly 130. The second sealingsurface on the second chamber assembly can include second sealingsurface 303 b on flange 302 of the substrate stage 120. A dual-contactseal 320 is presented comprising two contact ridges 322 and a pocket 324disposed therebetween. The dual-contact seal 320 is coupled to the firstsealing surface 303 a, and it is retained on flange 302 by a confinementlip 326 that is typically formed in the first sealing surface 303 a offlange 302 on both sides of seal 320. Of course, other methods ofattaching or removably attaching the seal 320 are contemplated.

During substrate transfer or prior to substrate processing, the processspace 180 is open to the transfer space 182. Either the process space180 or transfer space 182 or both may be evacuated, purged with gas,such as an inert gas, or both. For example, the pressure within processspace 180 and transfer space 182 may be a vacuum pressure; however, itmay be elevated to a value greater than the pressure in process space180 during substrate processing. Once the substrate stage 120 translatesvertically to engage the seal 320 with extension 304, high pressure gas,such as inert gas, is trapped in pocket 324. Here, the gas trapped inpocket 324 is at a pressure greater than the respective pressures in theprocess space 180 and the transfer space 182 once the seal is engaged.For example, the pressure of the trapped gas may be higher due to thepartial compression of seal 320 upon formation of the vacuum seal or dueto lowering of the respective pressures in process space 180 andtransfer space 182 following the formation of the vacuum seal or heatingof the trapped gas or any combination thereof, to name a few reasons.During the lowering of substrate stage 120, the high pressure gastrapped in pocket 324 can assist in the release of seal 320 withoutdetriment to the seal.

Referring now to FIG. 6, according to another embodiment of theinvention, a seal configuration for producing a seal between a flange302 of the substrate stage 120 and an extension 304 from the upperchamber assembly 130, while improving the release of the seal followingprocessing, is illustrated. A tri-contact seal 330 is presentedcomprising three contact ridges 332 and a dual-pocket 334 disposedtherebetween. A confinement lip 336 can be formed in flange 302 on bothsides of seal 306 in order to retain seal 330 on flange 302.

During substrate transfer or prior to substrate processing, the processspace 180 is open to the transfer space 182. Either the process space180 or transfer space 182 or both may be purged with gas, such as aninert gas, and the pressure within process space 180 and transfer space182 may be elevated to a value greater than the pressure in processspace 180 during substrate processing. Once the substrate stage 120translates vertically to engage the seal 330 with extension 304, highpressure, inert gas is trapped in dual-pocket 334. During the loweringof substrate stage 120, the high pressure inert gas trapped indual-pocket 334 can assist in the release of seal 330 without detrimentto the seal.

Seals 320 and 330 can be fabricated from an elastomeric material, suchas Viton or Kalrez, for example. Of course, other materials may be usedas appropriate to the process performed.

Referring now to FIG. 7, a process flow diagram 600 is provided for amethod of exhausting a vacuum processing system is shown in accordancewith one embodiment of the present invention. The process flow diagram600 begins in 610 with evacuating a process space in a vacuum processingsystem through a primary vacuum line. For example, a vacuum pump, suchas the first vacuum pump depicted in FIGS. 1A, 1B, 2A, 2B and 3, may bepneumatically coupled to the process space through the primary vacuumline, and may be utilized to serve as an exhaust for excess process gasor residual process gas, or process effluent, or contaminants, or othergaseous environment in the process space.

In 620, a process gas is introduced to the process space through aprocess gas supply line in order to facilitate the processing of asubstrate. For example, the process may include a vapor depositionprocess, such as a CVD, PECVD, ALD, PEALD, or etch process. The processgas may flow from a process material supply system through a process gassupply line to a plenum, wherein the process gas may be distributedamongst a plurality of orifices coupled to the process space.

In 630, the introduction of process gas to the process space isterminated.

In 640, the process gas supply line, as well as the plenum, areexhausted through an auxiliary vacuum line to the vacuum. It should benoted that a dedicated vacuum line may be connected between the vacuumpump and the plenum such that the vacuum pump evacuates the plenumseparately from the connection made via the gas supply line. One benefitof such an arrangement is that the dedicated vacuum line may be madelarger and shorter than the gas supply line. In one non-limitingembodiment, more than two vacuum connections are connected used. Forexample, one connection from the vacuum pump can be made to connect tothe gas supply line, a separate connection can be made to the plenum,and another connection can be made to one or both of the process space180 and transfer space 182. Any combination of two or more of theabove-noted connections can be used. Additionally, each connection maybe made via a dedicated fluid pathway or via a partially dedicatedpathway that combines along a portion of its length with one or more ofthe pathways used to make the other fluid connections.

FIG. 8 shows a process flow diagram of a process in accordance with oneembodiment of the present invention. The process of FIG. 8 may beperformed by the processing system of FIGS. 1-2, or any other suitableprocessing system. As seen in FIG. 8, in step 710, the process includesdisposing a substrate in a process space of a processing system that isvacuum isolated from a transfer space of the processing system. In step720, a substrate is processed at either of a first position or a secondposition in the process space while maintaining vacuum isolation fromthe transfer space. In step 730, a material is deposited on thesubstrate at either the first position or the second position.

In steps 710-730, the first assembly is preferably maintained greaterthan or equal to 100 degrees C., while the second assembly is preferablymaintained less than or equal to 100 degrees C. In steps 710-730, thefirst assembly is more preferably maintained greater than or equal to 50degrees C., while the second assembly is more preferably maintained lessthan or equal to 50 degrees C. In steps 710-730, the gas conductancefrom the process space to the transfer space is preferably held to lessthan 10⁻³ Torr-l/s, and more preferably less than 10⁻⁴ Torr-l/s.

In step 730, in order to deposit a material, a process gas compositioncan be introduced to the process for vapor deposition of the material.Further, plasma can be formed from the process gas composition toenhance the vapor deposition rate.

In step 730, the material deposited is typically at least one of ametal, metal oxide, metal nitride, metal carbonitride, or a metalsilicide. For example, the material deposited can be at least one of atantalum film, a tantalum nitride film, or a tantalum carbonitride film.

The processing system can be configured for at least one of an atomiclayer deposition (ALD) process, a plasma enhanced ALD (PEALD) process, achemical vapor deposition (CVD) process, or a plasma enhanced CVD(PECVD) process.

In step 730, plasma can be formed by applying radio frequency (RF)energy at a frequency from 0.1 to 100 MHz to a process gas in theprocess space. During step 730, an electrode can be connected to a RFpower supply and configured to couple the RF energy into the processspace.

Furthermore, a purge gas can be introduced after depositing thematerial. Moreover, with or without the purge gas present,electromagnetic power can be coupled to the vapor deposition system torelease contaminants from at least one of the vapor deposition system orthe substrate. The electromagnetic power can be coupled into the vapordeposition system in the form of a plasma, an ultraviolet light, or alaser.

Referring again to FIG. 1A, controller 170 can include a microprocessor,memory, and a digital I/O port capable of generating control voltagessufficient to communicate and activate inputs to deposition system 101as well as monitor outputs from deposition system 101. Moreover, thecontroller 170 may exchange information with the processing chamber 110,substrate stage 120, upper assembly 130, lower chamber assembly 132,process material supply system 140, first power source 150, substratetemperature control system 160, first vacuum pump 190, first vacuumvalve 194, second vacuum pump 192, second vacuum valve 196, and processvolume adjustment system 122. For example, a program stored in thememory may be utilized to activate the inputs to the aforementionedcomponents of the deposition system 101 according to a process recipe inorder to perform an etching process, or a deposition process.

The controller 170 can include a microprocessor, memory, and a digitalI/O port capable of generating control voltages sufficient tocommunicate and activate inputs to deposition system 101 (101′) as wellas monitor outputs from deposition system 101 (101′) in order to controland monitor the above-discussed processes for material deposition. Forexample, the controller 170 can include computer readable mediumcontaining program instructions for execution to accomplish the stepsdescribed above in relation to FIG. 6. Moreover, the controller 170 maybe coupled to and may exchange information with the process chamber 110,substrate stage 120, upper assembly 130, process material gas supplysystem 140, power source 150, substrate temperature controller 160,first vacuum pumping system 190, and/or second vacuum pumping system192. For example, a program stored in the memory may be utilized toactivate the inputs to the aforementioned components of the depositionsystem 101 (101′) according to a process recipe in order to perform oneof the above-described non-plasma or plasma enhanced depositionprocesses.

One example of the controller 170 is a DELL PRECISION WORKSTATION 610™,available from Dell Corporation, Austin, Tex. However, the controller170 may be implemented as a general-purpose computer system thatperforms a portion or all of the microprocessor based processing stepsof the invention in response to a processor executing one or moresequences of one or more instructions contained in a memory. Suchinstructions may be read into the controller memory from anothercomputer readable medium, such as a hard disk or a removable mediadrive. One or more processors in a multi-processing arrangement may alsobe employed as the controller microprocessor to execute the sequences ofinstructions contained in main memory. In alternative embodiments,hard-wired circuitry may be used in place of or in combination withsoftware instructions. Thus, embodiments are not limited to any specificcombination of hardware circuitry and software.

The controller 170 includes at least one computer readable medium ormemory, such as the controller memory, for holdinginstructions-programmed according to the teachings of the invention andfor containing data structures, tables, records, or other data that maybe necessary to implement the present invention. Examples of computerreadable media are compact discs, hard disks, floppy disks, tape,magneto-optical disks, PROMs (EPROM, EEPROM, flash EPROM), DRAM, SRAM,SDRAM, or any other magnetic medium, compact discs (e.g., CD-ROM), orany other optical medium, punch cards, paper tape, or other physicalmedium with patterns of holes, a carrier wave (described below), or anyother medium from which a computer can read.

Stored on any one or on a combination of computer readable media, thepresent invention includes software for controlling the controller 170,for driving a device or devices for implementing the invention, and/orfor enabling the controller to interact with a human user. Such softwaremay include, but is not limited to, device drivers, operating systems,development tools, and applications software. Such computer readablemedia further includes the computer program product of the presentinvention for performing all or a portion (if processing is distributed)of the processing performed in implementing the invention.

The computer code devices of the present invention may be anyinterpretable or executable code mechanism, including but not limited toscripts, interpretable programs, dynamic link libraries (DLLs), Javaclasses, and complete executable programs. Moreover, parts of theprocessing of the present invention may be distributed for betterperformance, reliability, and/or cost.

The term “computer readable medium” as used herein refers to any mediumthat participates in providing instructions to the processor of thecontroller 170 for execution. A computer readable medium may take manyforms, including but not limited to, non-volatile media, volatile media,and transmission media. Non-volatile media includes, for example,optical, magnetic disks, and magneto-optical disks, such as the harddisk or the removable media drive. Volatile media includes dynamicmemory, such as the main memory. Moreover, various forms of computerreadable media may be involved in carrying out one or more sequences ofone or more instructions to the processor of the controller forexecution. For example, the instructions may initially be carried on amagnetic disk of a remote computer. The remote computer can load theinstructions for implementing all or a portion of the present inventionremotely into a dynamic memory and send the instructions over a networkto the controller 170.

The controller 170 may be positioned locally relative to the depositionsystem 101 (101′), or it may be remotely located relative to thedeposition system 101. For example, the controller 170 may exchange datawith the deposition system 101 using at least one of a directconnection, an intranet, the Internet and a wireless connection. Thecontroller 170 may be coupled to an intranet at, for example, a customersite (i.e., a device maker, etc.), or it may be coupled to an intranetat, for example, a vendor site (i.e., an equipment manufacturer).Additionally, for example, the controller 170 may be coupled to theInternet. Furthermore, another computer (i.e., controller, server, etc.)may access, for example, the controller 170 to exchange data via atleast one of a direct connection, an intranet, and the Internet. As alsowould be appreciated by those skilled in the art, the controller 170 mayexchange data with the deposition system 101 (101′) via a wirelessconnection.

Although only certain exemplary embodiments of inventions have beendescribed in detail above for use with vapor deposition systems, thoseskilled in the art will readily appreciate that many modifications arepossible in the exemplary embodiments without materially departing fromthe novel teachings and advantages of this invention. For example, thevacuum seal provided between an upper chamber assembly and a lowerchamber assembly, or one vacuum chamber component and another vacuumchamber component, as described above, may be utilized in other vacuumprocessing systems, such as dry etching systems, dry plasma etchingsystems, etc.

1. A vacuum processing system, comprising: a vacuum processing chamberconfigured to treat a substrate, the vacuum processing chamber includinga first chamber assembly including a process space configured tofacilitate material deposition, the first chamber assembly furtherincluding a pumping manifold with an extension extending from a part ofsaid first chamber assembly to separate said process space from atransfer space, the extension including an internal channel thatconnects an inlet of a first vacuum pump in fluid communication with theprocess space in said vacuum processing chamber via one or more openingsin said extension, said one or more openings being positioned below atop surface of a substrate stage connected to said second chamberassembly and configured to support and translate said substrate betweena first position in said process space to a second position in saidtransfer space such that tops of the openings in said extension arepositioned below a top surface of the substrate stage when the substrateis in the first position, and a second chamber assembly including thetransfer space, the transfer space being configured to facilitatetransfer of said substrate into and out of said vacuum processingsystem; a process material supply system configured to connect in fluidcommunication with said vacuum processing chamber and configured tointroduce a process gas to said process space via a gas injectionsystem; and a process gas supply line configured to establish fluidcommunication from said process material supply system to said vacuumprocessing chamber and to permit a flow of process gas from said processmaterial supply system to said process space, and further configured toconnect in fluid communication with said first vacuum pump separatelyfrom said process space; a primary vacuum line configured to establishfluid communication between said vacuum pump and said vacuum processingchamber and to permit flow of exhaust gases from said process space tosaid vacuum pump; a second vacuum pump in fluid communication with saidsecond chamber assembly and configured to provide a reduced contaminantenvironment in said transfer space; and a temperature control systemcoupled to said substrate stage, and configured to control a temperatureof said substrate, a sealing device configured to provide a vacuum sealbetween said substrate stage and said first chamber assembly when saidsubstrate stage is in said first position, wherein said sealing deviceis configured to vacuum isolate said process space from said transferspace, wherein the extension comprises a first wall and a second wall,and the first wall is disposed between the process space and secondwall, and the interior channel is disposed between the first and secondwalls, and wherein the first wall is concentric to the second wall suchthat the internal channel comprises an annular shape curved around thesubstrate stage.
 2. The vacuum processing system of claim 1, furthercomprising: an auxiliary vacuum line coupled to said process gas supplyline and configured to establish fluid communication between saidprocess gas supply line and said first vacuum pump; and a flow valvesystem coupled to said process gas supply line and said auxiliary vacuumline, and configured to open said process gas supply line and close saidauxiliary vacuum line during a flow of gas from the process material gassupply system to said process space, and configured to close saidprocess gas supply line and open said auxiliary vacuum line duringevacuation of said process gas supply line by said vacuum pump.
 3. Thevacuum processing system of claim 2, wherein said flow valve systemcomprises: a first flow valve coupled to said auxiliary vacuum line; anda second flow valve coupled to said process gas supply line, whereinclosing said first flow valve and opening said second flow valvefacilitates exhausting said process gas supply line, and wherein openingsaid first flow valve and closing said second flow valve facilitatesflowing gas from said process material supply system to said processspace.
 4. The vacuum processing system of claim 2, wherein said flowvalve system comprises a three-way vacuum valve coupled to said processgas supply line and said auxiliary vacuum line.
 5. The vacuum processingsystem of claim 2, wherein said gas injection system comprises: ahousing having a plenum pneumatically coupled to said process gas supplyline and configured to receive said process gas through said process gassupply line from said process material supply system; and an injectionplate coupled to said housing and having a plurality of orificespneumatically coupling said plenum to said process space in order todistribute said process gas within said process space.
 6. The vacuumprocessing system of claim 5, wherein said vacuum pump is configured toevacuate said process gas supply line and said plenum through saidauxiliary vacuum line.
 7. The vacuum processing system of claim 2,wherein said process space is configured to perform at least one ofatomic layer deposition (ALD) or chemical vapor deposition (CVD).
 8. Thevacuum processing system of claim 1, wherein said first chamber assemblycomprises an upper section of said vacuum processing system and saidsecond chamber assembly comprises a lower section of said vacuumprocessing system; and said substrate stage is configured to translatesaid substrate in a vertical direction.
 9. The vacuum processing systemof claim 1, further comprising: a power source configured to couplepower to a process gas composition in said process space to facilitateplasma formation.
 10. The vacuum processing system of claim 9, whereinsaid power source comprises an RF power supply configured to output anRF energy at a frequency from 0.1 to 100 MHz; and said substrate stageincludes an electrode connected to said RF power supply and configuredto couple said RF energy into said process space.
 11. The vacuumprocessing system of claim 1, wherein said interior channel to providegas conductance from a first side of said extension near said substratestage to a second side positioned longitudinally at an end of saidextension opposite said first side.
 12. The vacuum processing system ofclaim 1, wherein the gas injection system is coupled to said vacuumprocessing chamber and said process gas supply line, and configured todistribute said process gas from said process material supply system insaid process space above said substrate.
 13. The vacuum processingsystem of claim 1, wherein the first chamber assembly is disposed withinthe second chamber assembly.
 14. The vacuum processing system of claim1, wherein the internal channel extends vertically from an upper side ofa showerhead to a lower side of the showerhead, and the substrate stageis disposed on the lower side of the showerhead.